? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c15a i dm t c = 25 c, pulse width limited by t jm 78 a i ar t c = 25 c26a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 130 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1, leads-to-tab 2500 v~ f c mounting force 11..65 /2.5..15 n/lb weight 2g g = gate d = drain s = source ds99310(1/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t 260 m ? pulse test, t 300 s, duty cycle d 2 % v dss = 500 v i d25 =15 a r ds(on) = 260 m ? ? ? ? ? electrically isolated tab, n-channel enhancement mode, fast intrinsic diode avalanche rated isoplus220 tm (ixfc) e153432 advance technical information g d s isolated tab features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density ixfc 26n50p polarhv tm hiperfet power mosfet
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = t , pulse test 20 28 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 380 pf c rss 48 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 25 ns t d(off) r g = 4 ? (external) 58 ns t f 20 ns q g(on) 96 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 20 nc q gd 45 nc r thjc 0.75 0.95 k/w r thck 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 15 a i sm repetitive 78 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 250 ns -di/dt = 100 a/ s q rm v r = 100 v 0.3 c note: test current i t = 15a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 isoplus220 outline ixfc 26n50p
? 2005 ixys all rights reserved ixfc 26n50p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 5.5v 5v 6v 7v fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 02 46 8101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 4.5v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 012345678 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 4.5v 5.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 26a i d = 13a v gs = 10v fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 26n50p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 3040 5060 7080 90100 q g - nanocoulombs v g s - volts v ds = 250v i d = 13a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. trans conductance 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source curre nt vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe ope r ating ar e a 0.1 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds( on) limit 10ms 25 s
? 2005 ixys all rights reserved ixfc 26n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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